By 2027, the GaN and SiC power semiconductor market is expected to exceed US$4.5 billion

The vigorous development and promotion of 5G technology worldwide will provide new growth prospects for gallium nitride (GaN) and silicon carbide (SiC) power semiconductor manufacturers. These semiconductors are known for providing small size and high power density, and they have accelerated their adoption as telecom operators expand infrastructure development.

According to a study by Global Market Insights, by 2027, the GaN and SiC power semiconductor market is expected to exceed US$4.5 billion. The continuous measures taken by governments to adopt 5G technology will promote the development of the industry.

Due to the integration of dedicated chipsets and integrated circuits, technological innovations within SiC power modules can reduce equipment footprint and improve energy efficiency, which may drive its demand for smart grid applications and smart meters. In addition, due to the development trend of industrial automation robots and machinery, the industrial motor drive sector is expected to witness high product demand.

In 2020, the discrete GaN class will account for about 2% of the industry share, and the compound annual growth rate is expected to reach about 40% within the forecast period. Discrete GaN power semiconductors have the advantages of low cost and wide band gap, so the demand for charging applications in consumer electronic devices is increasing.

GaN and SiC power semiconductor devices help increase power density and reduce the size of passive devices, thereby promoting their application in photovoltaic inverters. The market share of photovoltaic inverter applications in 2020 will remain above 25%. Due to the surge in consumer preference for clean power, it is likely to grow at a compound annual growth rate of 30% within the predicted time frame.

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